G. Gupta and K. Majumdar, "Polarized and narrow excitonic emission from graphenecapped monolayer WS_{2} through resonant phonon relaxation," Physical Review B, 108, 075436, 2023 (arXiv). 

S. Chatterjee*, M. Dandu*, P. Dasika*, R. Biswas, S. Das, K. Watanabe, T. Taniguchi, V. Raghunathan K. Majumdar, "Harmonic to anharmonic tuning of moiré potential leading to unconventional Stark effect and giant dipolar repulsion in WS_{2}/WSe_{2} heterobilayer," Nature Communications, 14, 4679, 2023 (arXiv). (*Equal contribution) 

G. Gupta, K. Watanabe, T. Taniguchi, and K. Majumdar, "Observation of ~100% valleycoherent excitons in monolayer MoS_{2} through giant enhancement of valley coherence time," Light: Science & Applications, 12, 173, 2023 (arXiv). 

M. Khatoniar, N. Yama, A. Ghazaryan, S. Guddala, P. Ghaemi, K. Majumdar, and V. Menon, "Optical Manipulation of Layer–Valley Coherence via Strong Exciton–Photon Coupling in Microcavities," Advanced Optical Materials, 11, 2202631, 2023. 
S. Hitesh, P. Dasika, K. Watanabe, T. Taniguchi, and K. Majumdar, "Integration of 3level MoS_{2} multibridge channel FET with 2D layered contact and gate dielectric," IEEE Electron Device Letters, 43, 1993, 2022 (arXiv). 

M. Mahajan and K. Majumdar, "ChargeDensity Wave Driven Giant ThermionicCurrent Switching in 1TTaS_{2}/2HTaSe_{2}/2HMoS_{2} Heterostructure," Advanced Electronic Materials, 8, 2200866, 2022 (arXiv). 

P. Dasika, K. Watanabe, T. Taniguchi, and K. Majumdar, "Electrically SelfAligned, Reconfigurable Test Structure Using WSe_{2}/SnSe_{2} Heterojunction for TFET and MOSFET," IEEE Transactions on Electron Devices, 69, 5377, 2022. 

M. Dandu, G. Gupta, P. Dasika, K. Watanabe, T. Taniguchi, and K. Majumdar, "Electrically Tunable Localized versus Delocalized Intralayer Moiré Excitons and Trions in a Twisted MoS_{2} Bilayer," ACS Nano, 16, 8983, 2022 (arXiv). 

S. Das*, G. Gupta*, S. Chatterjee, K. Watanabe, T. Taniguchi, and K. Majumdar, "Highly nonlinear biexcitonic photocurrent from ultrafast interlayer charge transfer," ACS Nano, 16, 9728, 2022 (arXiv). (*Equal contribution) 

N. Abraham, K. Watanabe, T. Taniguchi, and K. Majumdar, "A HighQuality Entropy Source Using van der Waals Heterojunction for True Random Number Generation," ACS Nano, 16, 5898, 2022 (arXiv). 

S. Chatterjee, G. Gupta, S. Das, K. Watanabe, T. Taniguchi, and K. Majumdar, "Triontrion annihilation in monolayer WS_{2}" Physical Review B (Letters), 105, L121409, 2022 (arXiv). 

S. Chatterjee, S. Das, G. Gupta, K. Watanabe, T. Taniguchi, and K. Majumdar, "Probing biexciton in monolayer WS_{2} through controlled manybody interaction," 2D Materials, 9, 015023, 2022 (arXiv). 
M. Dandu, G. Gupta, and K. Majumdar, "Negative Differential Photoconductance as a Signature of Nonradiative Energy Transfer in van der Waals Heterojunction," ACS Nano, 15, 16432, 2021. 

N. Abraham, K. Watanabe, T. Taniguchi, and K. Majumdar, "Anomalous Stark Shift of Excitonic Complexes in Monolayer WS_{2}," Physical Review B, 103, 075430, 2021 (arXiv). 

K. Murali*, M. Dandu*, K. Watanabe, T. Taniguchi, and K. Majumdar, "Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level Depinning of van der Waals Contacts," Advanced Functional Materials, 31, 2010513, 2021 (arXiv). (* Equal contribution) 

P. Dasika, D. Samantaray, K. Murali, N. Abraham, K. Watanabe, T. Taniguchi, N. Ravishankar, and K. Majumdar, "ContactBarrier Free, High Mobility, DualGated Junctionless Transistor Using Tellurium Nanowire," Advanced Functional Materials, 31, 2006278, 2021 (arXiv). 

R. Biswas, M. Dandu, A. Prosad, S. Das, S. Menon, J. Deka, K. Majumdar, and V. Raghunathan, "Strong near bandedge excited secondharmonic generation from multilayer 2H Tin diselenide," Scientific Reports, 11, 15017, 2021. 

J. R. Gadde et al, "Twodimensional ReS_{2}: Solution to the unresolved queries on its structure and interlayer coupling leading to potential optical applications," Physical Review Materials, 5, 054006, 2021. 

P. Ravindra, R. Chaudhary, E. Athresh, S. Vura, S. Raghavan, R. Ranjan, K. Majumdar, and S. Avasthi, "Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate," Semiconductor Science and Technology, 36, 055016, 2021. 

A. Mohapatra, S. Das, K. Majumdar, M. S. R. Rao, and M. Jaiswal, "Thermal transport across wrinkles in fewlayer graphene stacks," Nanoscale Advances, 3, 1708, 2021. 
S. Das, M. Dandu, G. Gupta, K. Murali, N. Abraham, S. Kallatt, K. Watanabe, T. Taniguchi, and K. Majumdar, "Highly tunable layered exciton in bilayer WS_{2}: linear quantum confined Stark effect versus electrostatic doping," ACS Photonics, 7, 33863393, 2020 (arXiv). 

J. Deka, M. Dandu, L. Krishna, S. Menon, K. Jyothsna, R. Biswas, K. Majumdar, and V. Raghunathan, "Polarization independent enhancement of zeroth order diffracted second harmonic from multilayer gallium selenide on a silicon resonant metasurface," Optics Express, 28, 3569535707, 2020. 

N. Abraham, K. Murali, K. Watanabe, T. Taniguchi, and K. Majumdar, "Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications," ACS Nano, 14, 1567815687, 2020 (arXiv). 

T. Maji, A. Rajlakshmi, S. Mukherjee, R. Alexander, A. Mondal, S. Das, R. Sharma, N. Chakraborty, K. Dasgupta, Sharma, M. Anjanashree, R. Hawalder, M. Pandey, A. Naik, K. Majumdar, S. Pal, K. Adarsh, S. K. Ray, and D. Karmakar, "Combinatorial Largearea MoS2/AnataseTiO2 Interface: A Pathway to Emergent Optical and Optoelectronic Functionalities," ACS Applied Materials & Interfaces, 12, 44345, 2020. 

H. Chandrasekar, T. Razzak, C. Wang, Z. Reyes, K. Majumdar, S. Rajan, "Demonstration of Wide Bandgap AlGaN/GaN Negative Capacitance High Electron Mobility Transistors (NCHEMTs) Using Barium Titanate Ferroelectric Gates," Advanced Electronic Materials, 6, 2000074, 2020. 

M. Mahajan and K. Majumdar, "Gate and LightTunable Negative Differential Resistance with High Peak Current Density in 1TTaS_{2}/2HMoS_{2} TJunction," ACS Nano, 14, 6803, 2020 (arXiv). 

N. Abraham and K. Majumdar, "Unified benchmarking and characterization protocol for nanomaterialbased heterogeneous photodetector technologies," arXiv:2005.04385, 2020. 

S. Sarkar, I. Maity, H. L. Pradeepa, G. Nayak, L. Marty, J. Renard, J. Coraux, N. Bendiab, V. Bouchiat, S. Das, K. Majumdar, M. Jain, and A. Bid, "Anharmonicity in Ramanactive phonon modes in atomically thin MoS_{2}," Physical Review B, 101, 205302, 2020. 

S. Das, S. Kallatt, N. Abraham, and K. Majumdar, "Gatetunable trion switch for excitonic device applications," Physical Review B (Rapid Communication), 101, 081413(R), 2020 (arXiv). 

M. Dandu, K. Watanabe, T. Taniguchi, A. K. Sood, and K. Majumdar, "Spectrally tunable, large Raman enhancement from nonradiative energy transfer in van der Waals heterostructure," ACS Photonics, 7, 519, 2020 (arXiv). 

[Invited paper] R. Chaudhary, V. Raghunathan, and K. Majumdar, "Origin of selective enhancement of sharp defect emission lines in monolayer WSe_{2} on rough metal substrate," Journal of Applied Physics, Special Issue in Materials for Quantum Technologies: Computing, Information, and Sensing, 127, 073105, 2020 (arXiv). 

M. Dandu, K. Watanabe, T. Taniguchi, A. K. Sood,
and K. Majumdar, "Nonradiative energy transfer enhances Raman intensity in layered heterostructure," APS March Meeting, Denver, 2020. 

[Invited paper] K. Majumdar, K. Murali, N. Abraham, and M. Dandu, "Interlayer Charge and Energy Transfer in Layered Heterojunction Devices," 4th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference , Penang, 2020. 
R. Biswas, M. Dandu, S. Menon, K. Jha, Jyothsna K. M., K. Majumdar, and V. Raghunathan, "Thirdharmonic generation in multilayer Tin Diselenide under the influence of FabryPerot interference effects," Optics Express, 27, 2885528865, 2019. 

K. Murali, N. Abraham, S. Das, S. Kallatt, and K. Majumdar, "Highly Sensitive, Fast Graphene Photodetector with Responsivity >10^{6} A/W Using Floating Quantum Well Gate," ACS Applied Materials & Interfaces, 11, 30010, 2019 (arXiv). 

M. Mahajan*, S. Kallatt*, M. Dandu, N. Sharma, S. Gupta, and K. Majumdar, "Light emission from the layered metal 2HTaSe_{2} and its potential applications," Communications Physics, 2, Article number 88, 2019 (arXiv). (* Equal contribution) 

S. Das*, G. Gupta*, and K. Majumdar, "Layer degree of freedom for excitons in transition metal dichalcogenides," Physical Review B, 99, 165411, 2019 (arXiv). (* Equal contribution) 

M. Dandu, R. Biswas, S. Das, S. Kallatt, S. Chatterjee, M. Mahajan, V. Raghunathan, and K. Majumdar, "Strong Single and TwoPhoton Luminescence Enhancement by NonRadiative Energy Transfer across Layered Heterostructure," ACS Nano, 13, 4795, 2019 (arXiv).


S. Kallatt*, S. Das*, S. Chatterjee, and K. Majumdar, "Interlayer charge transport controlled by excitontrion coherent coupling," npj 2D Materials and Applications, 3, Article number 15, 2019 (arXiv). (* Equal contribution) 

T. K. Maji, K. Vaibhav, S. K. Pal, K. Majumdar, K. V. Adarsh, and D. Karmakar, "Intricate modulation of interlayer coupling at the graphene oxide/MoSe_{2} interface: Application in timedependent optics and device transport," Physical Review B, 99, 115309, 2019.


G. Gupta and K. Majumdar, "Fundamental exciton linewidth broadening in monolayer transition metal dichalcogenides," Physical Review B, 99, 085412, 2019 (arXiv).


M. Mahajan*, K. Murali*, N. Kawatra, and K. Majumdar, "Gatecontrolled large resistance switching driven by chargedensity wave in 1TTaS_{2}/2HMoS_{2} heterojunction," Physical Review Applied, 11, 024031, 2019 (arXiv). (* Equal contribution) 

S. Das*, G. Gupta*, and K. Majumdar, "Layer distribution of excitons in fewlayer TMDC," Graphene, Rome, June 2019. (* Equal contribution) 

K. Murali, N. Abraham, S. Das, S. Kallatt, M. Dandu, and K. Majumdar, "Fast Graphene Photodetector with Responsivity >10^{6} A/W," MRS Spring Meeting, Phoenix, April 2019. 

M. Dandu, M. Mahajan, S. Kallatt, and K. Majumdar, "Giant photoluminescence enhancement through nonradiative energy transfer in 2D/2D heterostructure," MRS Spring Meeting, Phoenix, April 2019. 
[Invited paper] K. Murali and K. Majumdar, "SelfPowered, Highly Sensitive, High Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction," IEEE Transactions on Electron Devices, Special Issue on 2D Materials for Electronic, Optoelectronic and Sensor Devices, 65, 41414148, 2018 (arXiv). 

K. Murali*, M. Dandu*, S. Das, and K. Majumdar, "Gate tunable WSe_{2}/SnSe_{2} backward diode with ultrahigh reverse rectification ratio", ACS Applied Materials & Interfaces, 10, 5657, 2018 (arXiv). (* Equal contribution) 

K. Murali., S. Kallatt, and K. Majumdar, "Substrate effects in high gain, low operating voltage SnSe_{2} photoconductor", Nanotechnology, 29, 035205, 2018 (arXiv). 

S. Kallatt, S. Nair, and K. Majumdar, "Asymmetrically Encapsulated vertical ITO/MoS_{2}/Cu_{2}O photodetector with ultrahigh sensitivity", Small, 14, 1702066, 2018 (arXiv). 

M. Mahajan, K. Murali, and K. Majumdar, "Enhancing charge density wave driven resistance switching through gate control," Poster, 4th International Conference on 2D Materials and Technologies (ICON2DMat), Melbourne 2018. 

G. Gupta and K. Majumdar, "Fundamental exciton linewidth in monolayer TMDs," Poster, 4th International Conference on 2D Materials and Technologies (ICON2DMat), Melbourne 2018. 
D. Somvanshi*, S. Kallatt*, C. Venkatesh, S. Nair, G. Gupta, J. Anthony, D. Karmakar, and K. Majumdar, "Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance", Physical Review B, 96, 205423, 2017 (arXiv). (* Equal contribution) 

G. Gupta, S. Kallatt, and K. Majumdar, "Direct observation of giant binding energy modulation of exciton complexes in monolayer MoSe_{2}", Physical Review B (Rapid Communication), 96, 081403(R), 2017 (arXiv). 
S. Kallatt, G. Umesh, N. Bhat, and K. Majumdar, "Photoresponse of Atomically Thin MoS_{2} Layers and Their Planar Heterojunctions", Nanoscale, 8, 1521315222, 2016 (arXiv). 

S. Kallatt, G. Umesh, and K. Majumdar, "Valley Coherent Hot Carriers and Thermal Relaxation in Monolayer Transition Metal Dichalcogenides", The Journal of Physical Chemistry Letters, 7, 20322038, 2016 (arXiv). 

K. Majumdar, S. Datta, and S. P. Rao, "Revisiting the theory of ferroelectric negative capacitance", IEEE Transactions on Electron Devices, Vol. 63, No. 5, pp. 20432049, 2016 (arXiv). [In top 3 most popular papers of IEEE TED, April 2016] 

[Invited paper] S. Kallatt, and K. Majumdar, "Nature of Photoresponse in Atomically Thin Transition Metal Chalcogenides," International Conference on Electronic Materials (ICEM), Singapore, July 0408, 2016. 

Z.P. Ling, K. Majumdar, S. Sarkar, S. Mathew, J.T. Zhu, K. Gopinadhan, T. Venkatesan, and K.W. Ang, "Nickelphosphide contact for effective Schottky barrier modulation in black phosphorus pchannel transistors," 2016 International Symposium on VLSI Technology, Systems and Applications (VLSITSA), Hsinchu, Taiwan, Apr. 2527, 2016. 

S. Dasgupta, A. Rajashekhar, K. Majumdar, N. Agrawal, A. Razavieh, S. TrolierMckinstry, and S. Datta, "SubkT/q Switching in Strong Inversion in PbZr_{0.52}Ti_{0.48}O_{3} Gated Negative Capacitance FETs", IEEE Journal of Exploratory SolidState Comp. Dev. and Cir., Vol. 1, pp. 4348, 2015. 

P. M. Thomas, M. J. Filmer, A. Gaur, E. Marini, D. J. Pawlik, B. Romanczyk, S. L. Rommel, K. Majumdar, W. Y. Loh, M. H. Wong, C. Hobbs, K. Bhatnagar, R. ContrerasGuerrero, and R. Droopad, "Performance Evaluation of In_{0.53}Ga_{0.47}As Esaki Tunnel Diodes on Silicon and InP substrates", IEEE Transactions on Electron Devices,Vol. 62, No. 8, pp. 24502456, 2015. 

C. D. Young, A. Neugroschel, K. Majumdar, K. Matthews, Z. Wang and C. Hobbs, "Investigation of Negative Bias Temperature Instability Dependence on Fin Width of SOI FinFETs", Journal of Applied Physics, 117, 034501, 2015. 
L. M. Yang, K. Majumdar, Y. C. Du, H. Liu, H. Wu, M. S. Hatzistergos, P. Y. Hung, R. Tieckelmann, C. Hobbs, P. D. Ye, "Chloride Molecular Doping Technique on 2D Materials:WS_{2} and MoS_{2}", Nano Letters, 14, 6275, 2014. 

K. Majumdar, P. Thomas,W. Y. Loh, P. Y. Hung, K. Matthews, D. Pawlik, B. Romancyzk, M. Filmer, A. Gaur, R. Droopad, S. L. Rommel, C. Hobbs and P. D. Kirsch, "Mapping defect density in MBE grown In_{0.53}Ga_{0.47}As epitaxial layers on Si substrate using Esaki diode valley characteristics", IEEE Transactions on Electron Devices, Vol. 61, No. 6, pp. 20492055, 2014. 

K. Majumdar, "Band to band tunneling in IIIV semiconductors: Implications of complex band structure, strain, orientation, and offzone center contribution", Journal of Applied Physics, 115, 174503, 2014. 

Y. Du, L. Yang, J. Zhang, H. Liu, K. Majumdar, P. Kirsch, and P. D. Ye, "MoS_{2} fieldeffect transistors with graphene/metal heterocontacts", IEEE Electron Device letters, Vol. 35, No. 5, pp. 599601, 2014. 

K. Majumdar, C. Hobbs and P. D. Kirsch, "Benchmarking transition metal dichalcogenide MOSFET in the ultimate physical scaling limit", IEEE Electron Device letters, Vol. 35, No. 3, pp. 402404, 2014. 

L. M. Yang, K. Majumdar, Y. C. Du, H. Liu, H. Wu, M. S. Hatzistergos, P. Y. Hung, R. Tieckelmann, C. Hobbs, P. D. Ye, "Highperformance MoS_{2} fieldeffect transistors enabled by chloride doping: record low contact resistance (0.5kohmum) and record high drain current (460uA/um)," Symp. on VLSI Tech. (VLSIT), LATE NEWS, Honolulu, June 2014. PRESS: Highlighted in Semiconductor Today, Physics.org, Solid State Technology, Yahoo Finance, SRC news, Purdue News. 

K. Majumdar, R. Clark, T. Ngai, K. Tapily, S. Consiglio, E. Bersch, K. Matthews, E. Stinzianni, Y. Trickett, G. Nakamura, C. Wajda, G. Leusink, H. Chong, V. Kaushik, C. Hobbs, and P. Kirsch, "Statistical demonstration of silicidelike uniform and ultralow specific contact resistivity using a metal/highk/Si stack in a sidewall contact test structure," Symp. on VLSI Tech. (VLSIT), Honolulu, June 2014. 

[Invited paper] C. D. Young, A. Neugroschel, K. Majumdar, Z. Wang, K. Matthews and C. Hobbs, "Bias Temperature Instability Investigation of Doublegate FinFETs," International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, July 2014. 

Y. Du, L. Yang, J. Zhang, H. Liu, K. Majumdar, P. Kirsch, and P. D. Ye, "Physical understanding of graphene/metal heterocontacts to enhance MoS_{2} fieldeffect transistors performance," Poster presentation, Device Research Conference (DRC), Santa Barbara, June 2014. 

K. Majumdar, S. Vivekanand, C. Huffman, K. Matthews, T. Ngai, C. H. Chen, R. H. Baek, W. Y. Loh, M. Rodgers, H. Stamper, S. Gausepohl, C. Y. Kang, C. Hobbs and P. D. Kirsch, "STLM: A sidewall TLM structure for accurate extraction of ultralow specific contact resistivity", IEEE Electron Device letters, Vol. 34, No. 9, pp. 10821084, 2013. 

K. Majumdar, C. Hobbs, K. Matthews, C. H. Chen, T. Ngai, C. Y. Kang, G. Bersuker, S. Vivekanand, M. Rodgers, S. Gausepohl, P. D. Kirsch and R. Jammy, "Contact resistance improvement by dielectric breakdown in semiconductordielectricmetal contact", Applied Physics Letters, 102, 113505, 2013. 

B. Romanczyk, P. Thomas, D. Pawlik, S. L. Rommel, WY Loh, M. H. Wong, K. Majumdar, W.E. Wang and P. D. Kirsch, "Benchmarking Current Density in Staggered Gap In_{0.53}Ga_{0.47}As/ GaAs_{0.5}Sb_{0.5} Heterojunction Esaki Tunnel Diodes", Applied Physics Letters, 102, 213504, 2013. 

R.T.P. Lee, R.J.W. Hill,W.Y. Loh, R.H. Baek, S. Deora, K. Matthews, C. Huffman, K. Majumdar, T. Michalak, C. Borst, P.Y. Hung, C.H. Chen, J.H. Yum, T.W. Kim, C.Y. Kang, WE. Wang, D.H. Kim, C. Hobbs, P.D. Kirsch, "VLSI Processed InGaAs on Si MOSFETs with Thermally Stable, SelfAligned NiInGaAs Contacts Achieving: Enhanced Drive Current and Pathway Towards a Unified S/D Contact Module," IEEE International Electron Devices Meeting (IEDM), Washington DC, Dec. 2013. PRESS: Highlighted in SEMATECH news. 

K. Majumdar, S. Kallatt and N. Bhat, "High Field Carrier Transport in Graphene: Insights from Fast Current Transient", Applied Physics Letters, 101, 123505, 2012. 

K.W. Ang, K. Majumdar, K. Matthews, C. D. Young, C. Kenney, C. Hobbs, P. D. Kirsch, R. Jammy, R. D. Clark, S. Consiglio, K. Tapily, Y. Trickett, G. Nakamura, C. S. Wajda, G. J. Leusink, M. Rodgers and S. C. Gausepohl, "Effective Schottky Barrier Height Modulation using Dielectric Dipoles for Source/Drain Specific Contact Resistivity Improvement," IEEE International Electron Devices Meeting (IEDM), San Francisco, Dec. 2012. PRESS: Highlighted in SEMATECH news, Reuters. 

D. Pawlik, B. Romanczyk, P. Thomas, S. Rommel, M. Edirisooriya, R. ContrerasGuerrero, R. Droopad, WY Loh, M. H. Wong, K. Majumdar, W.E Wang, P. D. Kirsch and R. Jammy, "Benchmarking and Improving IIIV Esaki Diode Performance with a Record 2.2 MA/cm^{2} Peak Current Density to Enhance TFET Drive Current," IEEE International Electron Devices Meeting (IEDM), LATE NEWS, San Francisco, Dec. 2012. PRESS: Highlighted in Solid State Technology, SEMATECH news, Reuters. 

K. Majumdar, R. S. Konjady, R. Tejas S. and N. Bhat, "Underlap Optimization in HFinFET in Presence of Interface Traps" , IEEE Transactions on Nanotechnology, 10, 1249, 2011. 

[Invited paper] K. Majumdar, S. Kallatt and N. Bhat, "Graphene Transistors for CMOS Applications : Opportunities and Challenges" IWPSD, Kanpur, India, Dec. 2011. 

K. Majumdar, K. Murali, N. Bhat and Y. M. Lin, "External Bias Dependent Direct to Indirect Bandgap Transition in Graphene Nanoribbon", Nano Letters, 10(8), pp. 28572862, 2010. 

PRESS: "Graphene: Mind the Indirect Gap", Featured Highlight, Asia Materials, Nature
Publishing Group, DOI:10.1038/asiamat.2010.140.


K. Majumdar, K. Murali, N. Bhat and Y. M. Lin, "Intrinsic Limits of Subthreshold Slope in Bilayer Graphene Transistor", Applied Physics Letters, 96, 123504, 2010. 

K. Majumdar, N. Bhat, P. Majhi and R. Jammy, "Effects of Parasitics and Interface Traps on Ballistic Nanowire FET in The Ultimate Quantum Capacitance Limit", IEEE Transactions on Electron Devices, Vol. 57, No. 9, pp. 22642273, 2010. 

K. Majumdar, P. Majhi, N. Bhat and R. Jammy, "HFinFET: A Scalable, High Performance, Low Leakage Hybrid NChannel FET", IEEE Transactions on Nanotechnology, Vol. 9, No. 3, pp. 342344, 2010. 

K. Majumdar, K. Murali, N. Bhat, F. Xia and Y. M. Lin, "High OnOff Ratio Bilayer Graphene Complementary Field Effect Transistors," IEEE International Electron Devices Meeting (IEDM) Tech. Digest, pp. 736739, San Francisco, Dec, 2010. 

K. Majumdar, K. Murali, N. Bhat and Y.M. Lin, "SelfConsistent Electronic Structure in Biased Graphene Nanoribbon," IWPSD, New Delhi, India, Dec 2009. 

[Invited paper] K. Majumdar and N. Bhat, "Effect of Volume Inversion in Ultra Thin Body Double Gate FET," IWPSD, New delhi, India, Dec. 2009. 

A. S. Medury, K. Majumdar, N. Bhat and K. N. Bhat, "A Compact Model Incorporating Quantum Effects for UltraThinBody DoubleGate MOSFETs," InternationalNanoelectronics Conference (INEC), Hongkong, China, Jan 2010. 

A. S. Medury, K. Majumdar, N. Bhat and K. N. Bhat , "Modeling the Threshold Voltage of UltraThinBody(UTB) Long Channel Symmetric DoubleGate (DG) MOSFETs," International Semiconductor Device Research Symposium (ISDRS), University of Maryland at College Park, USA, Dec 2009. 

A. S. Medury, K. Majumdar, N. Bhat and K. N. Bhat , "UltraThinBody Symmetric DoubleGate MOSFETs: A Perturbation Based Device Model Incorporating Quantization Effects," IWPSD, New Delhi, India, Dec 2009. 

K. Majumdar and N. Bhat, "Bandstructure Effects in UltraThinBody DGFET: A Fullband Analysis", Journal of Applied Physics, Vol. 103, pp. 114503, 2008 (arXiv). 

K. Majumdar and S. Kar, "Modeling and Analysis of Optical Burst Switching Network", Journal of Optical Networks, Optical Society of America, Vol. 6, pp. 239, 2007. 

K. Majumdar and N. Das, "Mobile User Tracking Using A Hybrid Neural Network", Wireless Networks, Vol. 11, pp. 275, 2005. 

N. R. Pal, S. Pal, J. Das and K. Majumdar, "SOFMMLP: A Hybrid Neural Network for Atmospheric Temperature Prediction", IEEE Transactions on Geoscience and Remote Sensing, Vol. 41, No. 12, pp. 27832791, 2003. 

K. Majumdar and N. Das, "Neural Networks for Location Management in Mobile Cellular Communication Networks," IEEE TENCON, Bangalore, India, 2003. 

S. Pal, J. Das and K. Majumdar, "A Hybrid Neural Architecture and Its Application to Temperature Prediction," ICONIP, Istanbul, pp. 581588, 2003. 