Kausik Majumdar’s Group
Quantum Electronics Laboratory
Indian Institute of Science
Quantum Electronics Laboratory IISc
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2022

S. Hitesh, P. Dasika, K. Watanabe, T. Taniguchi, and K. Majumdar, "Integration of 3-level MoS2 multi-bridge channel FET with 2D layered contact and gate dielectric," IEEE Electron Device Letters, 43, 1993, 2022 (arXiv).

M. Mahajan and K. Majumdar, "Charge-Density Wave Driven Giant Thermionic-Current Switching in 1T-TaS2/2H-TaSe2/2H-MoS2 Heterostructure," Advanced Electronic Materials, 8, 2200866, 2022 (arXiv).

P. Dasika, K. Watanabe, T. Taniguchi, and K. Majumdar, "Electrically Self-Aligned, Reconfigurable Test Structure Using WSe2/SnSe2 Heterojunction for TFET and MOSFET," IEEE Transactions on Electron Devices, 69, 5377, 2022.

M. Dandu, G. Gupta, P. Dasika, K. Watanabe, T. Taniguchi, and K. Majumdar, "Electrically Tunable Localized versus Delocalized Intralayer Moiré Excitons and Trions in a Twisted MoS2 Bilayer," ACS Nano, 16, 8983, 2022 (arXiv).

S. Das*, G. Gupta*, S. Chatterjee, K. Watanabe, T. Taniguchi, and K. Majumdar, "Highly nonlinear biexcitonic photocurrent from ultrafast inter-layer charge transfer," ACS Nano, 16, 9728, 2022 (arXiv).
(*Equal contribution)

N. Abraham, K. Watanabe, T. Taniguchi, and K. Majumdar, "A High-Quality Entropy Source Using van der Waals Heterojunction for True Random Number Generation," ACS Nano, 16, 5898, 2022 (arXiv).

S. Chatterjee, G. Gupta, S. Das, K. Watanabe, T. Taniguchi, and K. Majumdar, "Trion-trion annihilation in monolayer WS2" Physical Review B (Letters), 105, L121409, 2022 (arXiv).

S. Chatterjee, S. Das, G. Gupta, K. Watanabe, T. Taniguchi, and K. Majumdar, "Probing biexciton in monolayer WS2 through controlled many-body interaction," 2D Materials, 9, 015023, 2022 (arXiv).

2021

G. Gupta, K. Watanabe, T. Taniguchi, and K. Majumdar, "Observation of perfect valley coherence in monolayer MoS2," arXiv:2106.03359, 2021.

M. Dandu, G. Gupta, and K. Majumdar, "Negative Differential Photoconductance as a Signature of Nonradiative Energy Transfer in van der Waals Heterojunction," ACS Nano, 15, 16432, 2021.

N. Abraham, K. Watanabe, T. Taniguchi, and K. Majumdar, "Anomalous Stark Shift of Excitonic Complexes in Monolayer WS2," Physical Review B, 103, 075430, 2021 (arXiv).

K. Murali*, M. Dandu*, K. Watanabe, T. Taniguchi, and K. Majumdar, "Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-pinning of van der Waals Contacts," Advanced Functional Materials, 31, 2010513, 2021 (arXiv).
(* Equal contribution)

P. Dasika, D. Samantaray, K. Murali, N. Abraham, K. Watanabe, T. Taniguchi, N. Ravishankar, and K. Majumdar, "Contact-Barrier Free, High Mobility, Dual-Gated Junctionless Transistor Using Tellurium Nanowire," Advanced Functional Materials, 31, 2006278, 2021 (arXiv).

R. Biswas, M. Dandu, A. Prosad, S. Das, S. Menon, J. Deka, K. Majumdar, and V. Raghunathan, "Strong near band-edge excited second-harmonic generation from multilayer 2H Tin diselenide," Scientific Reports, 11, 15017, 2021.

J. R. Gadde et al, "Two-dimensional ReS2: Solution to the unresolved queries on its structure and inter-layer coupling leading to potential optical applications," Physical Review Materials, 5, 054006, 2021.

P. Ravindra, R. Chaudhary, E. Athresh, S. Vura, S. Raghavan, R. Ranjan, K. Majumdar, and S. Avasthi, "Effect of nitrogen annealing on the optoelectronic properties of manganese vanadate," Semiconductor Science and Technology, 36, 055016, 2021.

A. Mohapatra, S. Das, K. Majumdar, M. S. R. Rao, and M. Jaiswal, "Thermal transport across wrinkles in few-layer graphene stacks," Nanoscale Advances, 3, 1708, 2021.

2020

S. Das, M. Dandu, G. Gupta, K. Murali, N. Abraham, S. Kallatt, K. Watanabe, T. Taniguchi, and K. Majumdar, "Highly tunable layered exciton in bilayer WS2: linear quantum confined Stark effect versus electrostatic doping," ACS Photonics, 7, 3386-3393, 2020 (arXiv).

J. Deka, M. Dandu, L. Krishna, S. Menon, K. Jyothsna, R. Biswas, K. Majumdar, and V. Raghunathan, "Polarization independent enhancement of zeroth order diffracted second harmonic from multilayer gallium selenide on a silicon resonant metasurface," Optics Express, 28, 35695-35707, 2020.

N. Abraham, K. Murali, K. Watanabe, T. Taniguchi, and K. Majumdar, "Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications," ACS Nano, 14, 15678-15687, 2020 (arXiv).

T. Maji, A. Rajlakshmi, S. Mukherjee, R. Alexander, A. Mondal, S. Das, R. Sharma, N. Chakraborty, K. Dasgupta, Sharma, M. Anjanashree, R. Hawalder, M. Pandey, A. Naik, K. Majumdar, S. Pal, K. Adarsh, S. K. Ray, and D. Karmakar, "Combinatorial Large-area MoS2/Anatase-TiO2 Interface: A Pathway to Emergent Optical and Opto-electronic Functionalities," ACS Applied Materials & Interfaces, 12, 44345, 2020.

H. Chandrasekar, T. Razzak, C. Wang, Z. Reyes, K. Majumdar, S. Rajan, "Demonstration of Wide Bandgap AlGaN/GaN Negative Capacitance High Electron Mobility Transistors (NCHEMTs) Using Barium Titanate Ferroelectric Gates," Advanced Electronic Materials, 6, 2000074, 2020.

M. Mahajan and K. Majumdar, "Gate- and Light-Tunable Negative Differential Resistance with High Peak Current Density in 1T-TaS2/2H-MoS2 T-Junction," ACS Nano, 14, 6803, 2020 (arXiv).

N. Abraham and K. Majumdar, "Unified benchmarking and characterization protocol for nanomaterial-based heterogeneous photodetector technologies," arXiv:2005.04385, 2020.

S. Sarkar, I. Maity, H. L. Pradeepa, G. Nayak, L. Marty, J. Renard, J. Coraux, N. Bendiab, V. Bouchiat, S. Das, K. Majumdar, M. Jain, and A. Bid, "Anharmonicity in Raman-active phonon modes in atomically thin MoS2," Physical Review B, 101, 205302, 2020.

S. Das, S. Kallatt, N. Abraham, and K. Majumdar, "Gate-tunable trion switch for excitonic device applications," Physical Review B (Rapid Communication), 101, 081413(R), 2020 (arXiv).

M. Dandu, K. Watanabe, T. Taniguchi, A. K. Sood, and K. Majumdar, "Spectrally tunable, large Raman enhancement from nonradiative energy transfer in van der Waals heterostructure," ACS Photonics, 7, 519, 2020 (arXiv).

[Invited paper] R. Chaudhary, V. Raghunathan, and K. Majumdar, "Origin of selective enhancement of sharp defect emission lines in monolayer WSe2 on rough metal substrate," Journal of Applied Physics, Special Issue in Materials for Quantum Technologies: Computing, Information, and Sensing, 127, 073105, 2020 (arXiv).

M. Dandu, K. Watanabe, T. Taniguchi, A. K. Sood, and K. Majumdar, "Nonradiative energy transfer enhances Raman intensity in layered heterostructure," APS March Meeting, Denver, 2020.

[Invited paper] K. Majumdar, K. Murali, N. Abraham, and M. Dandu, "Inter-layer Charge and Energy Transfer in Layered Heterojunction Devices," 4th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference , Penang, 2020.

2019

R. Biswas, M. Dandu, S. Menon, K. Jha, Jyothsna K. M., K. Majumdar, and V. Raghunathan, "Third-harmonic generation in multilayer Tin Diselenide under the influence of Fabry-Perot interference effects," Optics Express, 27, 28855-28865, 2019.

K. Murali, N. Abraham, S. Das, S. Kallatt, and K. Majumdar, "Highly Sensitive, Fast Graphene Photodetector with Responsivity >106 A/W Using Floating Quantum Well Gate," ACS Applied Materials & Interfaces, 11, 30010, 2019 (arXiv).

M. Mahajan*, S. Kallatt*, M. Dandu, N. Sharma, S. Gupta, and K. Majumdar, "Light emission from the layered metal 2H-TaSe2 and its potential applications," Communications Physics, 2, Article number 88, 2019 (arXiv).
(* Equal contribution)

S. Das*, G. Gupta*, and K. Majumdar, "Layer degree of freedom for excitons in transition metal dichalcogenides," Physical Review B, 99, 165411, 2019 (arXiv).
(* Equal contribution)

M. Dandu, R. Biswas, S. Das, S. Kallatt, S. Chatterjee, M. Mahajan, V. Raghunathan, and K. Majumdar, "Strong Single- and Two-Photon Luminescence Enhancement by Non-Radiative Energy Transfer across Layered Heterostructure," ACS Nano, 13, 4795, 2019 (arXiv).

S. Kallatt*, S. Das*, S. Chatterjee, and K. Majumdar, "Inter-layer charge transport controlled by exciton-trion coherent coupling," npj 2D Materials and Applications, 3, Article number 15, 2019 (arXiv).
(* Equal contribution)

T. K. Maji, K. Vaibhav, S. K. Pal, K. Majumdar, K. V. Adarsh, and D. Karmakar, "Intricate modulation of interlayer coupling at the graphene oxide/MoSe2 interface: Application in time-dependent optics and device transport," Physical Review B, 99, 115309, 2019.

G. Gupta and K. Majumdar, "Fundamental exciton linewidth broadening in monolayer transition metal dichalcogenides," Physical Review B, 99, 085412, 2019 (arXiv).

M. Mahajan*, K. Murali*, N. Kawatra, and K. Majumdar, "Gate-controlled large resistance switching driven by charge-density wave in 1T-TaS2/2H-MoS2 heterojunction," Physical Review Applied, 11, 024031, 2019 (arXiv).
(* Equal contribution)

S. Das*, G. Gupta*, and K. Majumdar, "Layer distribution of excitons in few-layer TMDC," Graphene, Rome, June 2019.
(* Equal contribution)

K. Murali, N. Abraham, S. Das, S. Kallatt, M. Dandu, and K. Majumdar, "Fast Graphene Photodetector with Responsivity >106 A/W," MRS Spring Meeting, Phoenix, April 2019.

M. Dandu, M. Mahajan, S. Kallatt, and K. Majumdar, "Giant photoluminescence enhancement through non-radiative energy transfer in 2D/2D heterostructure," MRS Spring Meeting, Phoenix, April 2019.

2018

[Invited paper] K. Murali and K. Majumdar, "Self-Powered, Highly Sensitive, High Speed Photodetection Using ITO/WSe2/SnSe2 Vertical Heterojunction," IEEE Transactions on Electron Devices, Special Issue on 2D Materials for Electronic, Optoelectronic and Sensor Devices, 65, 4141-4148, 2018 (arXiv).

K. Murali*, M. Dandu*, S. Das, and K. Majumdar, "Gate tunable WSe2/SnSe2 backward diode with ultra-high reverse rectification ratio", ACS Applied Materials & Interfaces, 10, 5657, 2018 (arXiv).
(* Equal contribution)

K. Murali., S. Kallatt, and K. Majumdar, "Substrate effects in high gain, low operating voltage SnSe2 photoconductor", Nanotechnology, 29, 035205, 2018 (arXiv).

S. Kallatt, S. Nair, and K. Majumdar, "Asymmetrically Encapsulated vertical ITO/MoS2/Cu2O photodetector with ultra-high sensitivity", Small, 14, 1702066, 2018 (arXiv).

M. Mahajan, K. Murali, and K. Majumdar, "Enhancing charge density wave driven resistance switching through gate control," Poster, 4th International Conference on 2D Materials and Technologies (ICON-2DMat), Melbourne 2018.

G. Gupta and K. Majumdar, "Fundamental exciton linewidth in monolayer TMDs," Poster, 4th International Conference on 2D Materials and Technologies (ICON-2DMat), Melbourne 2018.

2017

D. Somvanshi*, S. Kallatt*, C. Venkatesh, S. Nair, G. Gupta, J. Anthony, D. Karmakar, and K. Majumdar, "Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance", Physical Review B, 96, 205423, 2017 (arXiv).
(* Equal contribution)

G. Gupta, S. Kallatt, and K. Majumdar, "Direct observation of giant binding energy modulation of exciton complexes in monolayer MoSe2", Physical Review B (Rapid Communication), 96, 081403(R), 2017 (arXiv).

2016

S. Kallatt, G. Umesh, N. Bhat, and K. Majumdar, "Photoresponse of Atomically Thin MoS2 Layers and Their Planar Heterojunctions", Nanoscale, 8, 15213-15222, 2016 (arXiv).
S. Kallatt, G. Umesh, and K. Majumdar, "Valley Coherent Hot Carriers and Thermal Relaxation in Monolayer Transition Metal Dichalcogenides", The Journal of Physical Chemistry Letters, 7, 2032-2038, 2016 (arXiv).

K. Majumdar, S. Datta, and S. P. Rao, "Revisiting the theory of ferroelectric negative capacitance", IEEE Transactions on Electron Devices, Vol. 63, No. 5, pp. 2043-2049, 2016 (arXiv).
[In top 3 most popular papers of IEEE TED, April 2016]

[Invited paper] S. Kallatt, and K. Majumdar, "Nature of Photoresponse in Atomically Thin Transition Metal Chalcogenides," International Conference on Electronic Materials (ICEM), Singapore, July 04-08, 2016.

Z.-P. Ling, K. Majumdar, S. Sarkar, S. Mathew, J.-T. Zhu, K. Gopinadhan, T. Venkatesan, and K.-W. Ang, "Nickel-phosphide contact for effective Schottky barrier modulation in black phosphorus p-channel transistors," 2016 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), Hsinchu, Taiwan, Apr. 25-27, 2016.

2015

S. Dasgupta, A. Rajashekhar, K. Majumdar, N. Agrawal, A. Razavieh, S. Trolier-Mckinstry, and S. Datta, "Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs", IEEE Journal of Exploratory Solid-State Comp. Dev. and Cir., Vol. 1, pp. 43-48, 2015.

P. M. Thomas, M. J. Filmer, A. Gaur, E. Marini, D. J. Pawlik, B. Romanczyk, S. L. Rommel, K. Majumdar, W. Y. Loh, M. H. Wong, C. Hobbs, K. Bhatnagar, R. Contreras-Guerrero, and R. Droopad, "Performance Evaluation of In0.53Ga0.47As Esaki Tunnel Diodes on Silicon and InP substrates", IEEE Transactions on Electron Devices,Vol. 62, No. 8, pp. 2450-2456, 2015.

C. D. Young, A. Neugroschel, K. Majumdar, K. Matthews, Z. Wang and C. Hobbs, "Investigation of Negative Bias Temperature Instability Dependence on Fin Width of SOI FinFETs", Journal of Applied Physics, 117, 034501, 2015.

Before 2015

L. M. Yang, K. Majumdar, Y. C. Du, H. Liu, H. Wu, M. S. Hatzistergos, P. Y. Hung, R. Tieckelmann, C. Hobbs, P. D. Ye, "Chloride Molecular Doping Technique on 2D Materials:WS2 and MoS2", Nano Letters, 14, 6275, 2014.

K. Majumdar, P. Thomas,W. Y. Loh, P. Y. Hung, K. Matthews, D. Pawlik, B. Romancyzk, M. Filmer, A. Gaur, R. Droopad, S. L. Rommel, C. Hobbs and P. D. Kirsch, "Mapping defect density in MBE grown In0.53Ga0.47As epitaxial layers on Si substrate using Esaki diode valley characteristics", IEEE Transactions on Electron Devices, Vol. 61, No. 6, pp. 2049-2055, 2014.

K. Majumdar, "Band to band tunneling in III-V semiconductors: Implications of complex band structure, strain, orientation, and off-zone center contribution", Journal of Applied Physics, 115, 174503, 2014.

Y. Du, L. Yang, J. Zhang, H. Liu, K. Majumdar, P. Kirsch, and P. D. Ye, "MoS2 field-effect transistors with graphene/metal hetero-contacts", IEEE Electron Device letters, Vol. 35, No. 5, pp. 599-601, 2014.

K. Majumdar, C. Hobbs and P. D. Kirsch, "Benchmarking transition metal dichalcogenide MOSFET in the ultimate physical scaling limit", IEEE Electron Device letters, Vol. 35, No. 3, pp. 402-404, 2014.

L. M. Yang, K. Majumdar, Y. C. Du, H. Liu, H. Wu, M. S. Hatzistergos, P. Y. Hung, R. Tieckelmann, C. Hobbs, P. D. Ye, "High-performance MoS2 field-effect transistors enabled by chloride doping: record low contact resistance (0.5kohm-um) and record high drain current (460uA/um)," Symp. on VLSI Tech. (VLSIT), LATE NEWS, Honolulu, June 2014.

PRESS: Highlighted in Semiconductor Today, Physics.org, Solid State Technology, Yahoo Finance, SRC news, Purdue News.

K. Majumdar, R. Clark, T. Ngai, K. Tapily, S. Consiglio, E. Bersch, K. Matthews, E. Stinzianni, Y. Trickett, G. Nakamura, C. Wajda, G. Leusink, H. Chong, V. Kaushik, C. Hobbs, and P. Kirsch, "Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structure," Symp. on VLSI Tech. (VLSIT), Honolulu, June 2014.

[Invited paper] C. D. Young, A. Neugroschel, K. Majumdar, Z. Wang, K. Matthews and C. Hobbs, "Bias Temperature Instability Investigation of Double-gate FinFETs," International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore, July 2014.

Y. Du, L. Yang, J. Zhang, H. Liu, K. Majumdar, P. Kirsch, and P. D. Ye, "Physical understanding of graphene/metal hetero-contacts to enhance MoS2 field-effect transistors performance," Poster presentation, Device Research Conference (DRC), Santa Barbara, June 2014.

K. Majumdar, S. Vivekanand, C. Huffman, K. Matthews, T. Ngai, C. H. Chen, R. H. Baek, W. Y. Loh, M. Rodgers, H. Stamper, S. Gausepohl, C. Y. Kang, C. Hobbs and P. D. Kirsch, "STLM: A sidewall TLM structure for accurate extraction of ultra-low specific contact resistivity", IEEE Electron Device letters, Vol. 34, No. 9, pp. 1082-1084, 2013.

K. Majumdar, C. Hobbs, K. Matthews, C. H. Chen, T. Ngai, C. Y. Kang, G. Bersuker, S. Vivekanand, M. Rodgers, S. Gausepohl, P. D. Kirsch and R. Jammy, "Contact resistance improvement by dielectric breakdown in semiconductor-dielectric-metal contact", Applied Physics Letters, 102, 113505, 2013.

B. Romanczyk, P. Thomas, D. Pawlik, S. L. Rommel, W-Y Loh, M. H. Wong, K. Majumdar, W.-E. Wang and P. D. Kirsch, "Benchmarking Current Density in Staggered Gap In0.53Ga0.47As/ GaAs0.5Sb0.5 Heterojunction Esaki Tunnel Diodes", Applied Physics Letters, 102, 213504, 2013.

R.T.P. Lee, R.J.W. Hill,W.Y. Loh, R.-H. Baek, S. Deora, K. Matthews, C. Huffman, K. Majumdar, T. Michalak, C. Borst, P.Y. Hung, C.-H. Chen, J.-H. Yum, T.-W. Kim, C.Y. Kang, W-E. Wang, D.-H. Kim, C. Hobbs, P.D. Kirsch, "VLSI Processed InGaAs on Si MOSFETs with Thermally Stable, Self-Aligned Ni-InGaAs Contacts Achieving: Enhanced Drive Current and Pathway Towards a Unified S/D Contact Module," IEEE International Electron Devices Meeting (IEDM), Washington DC, Dec. 2013.

PRESS: Highlighted in SEMATECH news.

K. Majumdar, S. Kallatt and N. Bhat, "High Field Carrier Transport in Graphene: Insights from Fast Current Transient", Applied Physics Letters, 101, 123505, 2012.

K.-W. Ang, K. Majumdar, K. Matthews, C. D. Young, C. Kenney, C. Hobbs, P. D. Kirsch, R. Jammy, R. D. Clark, S. Consiglio, K. Tapily, Y. Trickett, G. Nakamura, C. S. Wajda, G. J. Leusink, M. Rodgers and S. C. Gausepohl, "Effective Schottky Barrier Height Modulation using Dielectric Dipoles for Source/Drain Specific Contact Resistivity Improvement," IEEE International Electron Devices Meeting (IEDM), San Francisco, Dec. 2012.

PRESS: Highlighted in SEMATECH news, Reuters.

D. Pawlik, B. Romanczyk, P. Thomas, S. Rommel, M. Edirisooriya, R. Contreras-Guerrero, R. Droopad, W-Y Loh, M. H. Wong, K. Majumdar, W.-E Wang, P. D. Kirsch and R. Jammy, "Benchmarking and Improving III-V Esaki Diode Performance with a Record 2.2 MA/cm2 Peak Current Density to Enhance TFET Drive Current," IEEE International Electron Devices Meeting (IEDM), LATE NEWS, San Francisco, Dec. 2012.

PRESS: Highlighted in Solid State Technology, SEMATECH news, Reuters.

K. Majumdar, R. S. Konjady, R. Tejas S. and N. Bhat, "Underlap Optimization in HFinFET in Presence of Interface Traps" , IEEE Transactions on Nanotechnology, 10, 1249, 2011.

[Invited paper] K. Majumdar, S. Kallatt and N. Bhat, "Graphene Transistors for CMOS Applications : Opportunities and Challenges" IWPSD, Kanpur, India, Dec. 2011.

K. Majumdar, K. Murali, N. Bhat and Y. M. Lin, "External Bias Dependent Direct to Indirect Bandgap Transition in Graphene Nanoribbon", Nano Letters, 10(8), pp. 2857-2862, 2010.

PRESS: "Graphene: Mind the Indirect Gap", Featured Highlight, Asia Materials, Nature Publishing Group, DOI:10.1038/asiamat.2010.140.

K. Majumdar, K. Murali, N. Bhat and Y. M. Lin, "Intrinsic Limits of Subthreshold Slope in Bilayer Graphene Transistor", Applied Physics Letters, 96, 123504, 2010.

K. Majumdar, N. Bhat, P. Majhi and R. Jammy, "Effects of Parasitics and Interface Traps on Ballistic Nanowire FET in The Ultimate Quantum Capacitance Limit", IEEE Transactions on Electron Devices, Vol. 57, No. 9, pp. 2264-2273, 2010.

K. Majumdar, P. Majhi, N. Bhat and R. Jammy, "HFinFET: A Scalable, High Performance, Low Leakage Hybrid N-Channel FET", IEEE Transactions on Nanotechnology, Vol. 9, No. 3, pp. 342-344, 2010.

K. Majumdar, K. Murali, N. Bhat, F. Xia and Y. M. Lin, "High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors," IEEE International Electron Devices Meeting (IEDM) Tech. Digest, pp. 736-739, San Francisco, Dec, 2010.

K. Majumdar, K. Murali, N. Bhat and Y.M. Lin, "Self-Consistent Electronic Structure in Biased Graphene Nanoribbon," IWPSD, New Delhi, India, Dec 2009.

[Invited paper] K. Majumdar and N. Bhat, "Effect of Volume Inversion in Ultra Thin Body Double Gate FET," IWPSD, New delhi, India, Dec. 2009.

A. S. Medury, K. Majumdar, N. Bhat and K. N. Bhat, "A Compact Model Incorporating Quantum Effects for Ultra-Thin-Body Double-Gate MOSFETs," InternationalNanoelectronics Conference (INEC), Hongkong, China, Jan 2010.

A. S. Medury, K. Majumdar, N. Bhat and K. N. Bhat , "Modeling the Threshold Voltage of Ultra-Thin-Body(UTB) Long Channel Symmetric Double-Gate (DG) MOSFETs," International Semiconductor Device Research Symposium (ISDRS), University of Maryland at College Park, USA, Dec 2009.

A. S. Medury, K. Majumdar, N. Bhat and K. N. Bhat , "Ultra-Thin-Body Symmetric Double-Gate MOSFETs: A Perturbation Based Device Model Incorporating Quantization Effects," IWPSD, New Delhi, India, Dec 2009.

K. Majumdar and N. Bhat, "Bandstructure Effects in Ultra-Thin-Body DGFET: A Fullband Analysis", Journal of Applied Physics, Vol. 103, pp. 114503, 2008 (arXiv).

K. Majumdar and S. Kar, "Modeling and Analysis of Optical Burst Switching Network", Journal of Optical Networks, Optical Society of America, Vol. 6, pp. 239, 2007.

K. Majumdar and N. Das, "Mobile User Tracking Using A Hybrid Neural Network", Wireless Networks, Vol. 11, pp. 275, 2005.

N. R. Pal, S. Pal, J. Das and K. Majumdar, "SOFM-MLP: A Hybrid Neural Network for Atmospheric Temperature Prediction", IEEE Transactions on Geoscience and Remote Sensing, Vol. 41, No. 12, pp. 2783-2791, 2003.

K. Majumdar and N. Das, "Neural Networks for Location Management in Mobile Cellular Communication Networks," IEEE TENCON, Bangalore, India, 2003.

S. Pal, J. Das and K. Majumdar, "A Hybrid Neural Architecture and Its Application to Temperature Prediction," ICONIP, Istanbul, pp. 581-588, 2003.